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2SC3356W [BL Galaxy Electrical]

Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
2SC3356W
型号： 2SC3356W
厂家： BL Galaxy Electrical    BL Galaxy Electrical
描述：

Silicon Epitaxial Planar Transistor
硅外延平面晶体管

晶体 晶体管
文件： 总4页 (文件大小：165K)
中文：  中文翻译
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BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC3356W  
FEATURES  
z
z
Low noise and high gain: NF=1.1dB TYP,  
Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz  
High power gain:MAG=13dB TYP.  
Pb  
Lead-free  
@VCE=10V.IC=20mA,f=1.0GHz  
APPLICATIONS  
z
NPN Silicon Epitaxial Planar Transistor.  
SOT-323  
ORDERING INFORMATION  
Type No.  
Marking  
R23/R24/R25  
Package Code  
SOT-323  
2SC3356W  
MAXIMUM RATING @ Ta=25℃ unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
VCBO  
20  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
12  
V
3
V
Collector Current -Continuous  
Collector Dissipation  
100  
200  
-55~150  
mA  
mW  
℃
PC  
Junction and Storage Temperature  
Tj,Tstg  
Document number: BL/SSSTF001  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC3356W  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Parameter  
Symbol Test conditions  
MIN  
20  
12  
3
TYP MAX UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=10μA,IE=0  
IC=1mA,IB=0  
IE=10μA,IC=0  
VCB=10V,IE=0  
V
V
V
0.1  
μA  
μA  
Emitter cut-off current  
DC current gain  
IEBO  
hFE  
VEB=1V,IC=0  
0.1  
VCE=10V,IC=20mA  
50  
300  
Transition frequency  
Noise figure  
VCE=10V, IC= 20mA  
fT  
F
6
GHz  
dB  
VCE=10V,IC=7mA,f=1GHz  
2
CLASSIFICATION OF hFE(1)  
Rank  
Q
R
S
Range  
50-100  
R23  
80-160  
R24  
125-250  
R25  
Marking  
Document number: BL/SSSTF001  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC3356W  
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Document number: BL/SSSTF001  
Rev.A  
www.galaxycn.com  
3
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC3356W  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-323  
SOT-323  
Dim  
A
Min  
1.8  
Max  
2.2  
B
1.15  
1.35  
C
D
E
1.0Typical  
0.15  
0.25  
1.2  
0.35  
0.40  
1.4  
G
H
J
0.02  
0.1  
0.1Typical  
K
2.1  
2.3  
All Dimensions in mm  
PACKAGE INFORMATION  
Device  
Package  
SOT-323  
Shipping  
2SC3356W  
3000/Tape&Reel  
Document number: BL/SSSTF001  
Rev.A  
www.galaxycn.com  
4

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